photo of Dmitri Migas

Dmitri Migas

Chief Researcher
Doctor of Sciences (Physics)
Professor

Department: Laboratory of NanoElectroMagnetics
Language proficiency: English Italiano
e-mail: migas@bsuir.by
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Field of research:

solid state physics, nanotechnology

Selected works:

Articles:

  1. Isostructural basi2, bage2 and srge2: electronic and optical properties / Migas D.B., Shaposhnikov V.L., Borisenko V.E. // Physica Status Solidi (B): Basic Solid State Physics. 2007. Т. 244. № 7. С. 2611-2618. DOI: 10.1002/pssb.200642556
  2. Electronic and related properties of crystalline semiconducting iron disilicide / Filonov A.B., Migas D.B., Shaposhnikov V.L., Dorozhkin N.N., Petrov G.V., Borisenko V.E., Henrion W., Lange H. // Journal of Applied Physics. 1996. Т. 79. № 10. С. 7708-7712. DOI: 10.1063/1.362436
  3. Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si (001) / Montalenti F., Raiteri P., Migas D.B., Miglio L., Känel H.V., Rastelli A., Manzano C., Costantini G., Denker U., Schmidt O.G., Kern K. // Physical Review Letters. 2004. Т. 93. № 21. С. 216102. DOI: 10.1103/PhysRevLett.93.216102
  4. Ab initio study of the band structures of different phases of higher manganese silicides / Migas D.B., Shaposhnikov V.L., Filonov A.B., Borisenko V.E., Dorozhkin N.N. // Physical Review B: Condensed Matter and Materials Physics. 2008. Т. 77. № 7. С. 075205. DOI: 10.1103/PhysRevB.77.075205
  5. Tungsten oxides. I. Effects of oxygen vacancies and doping on electronic and optical properties of different phases of WO3 / Migas D.B., Shaposhnikov V.L., Rodin V.N., Borisenko V.E. // Journal of Applied Physics. 2010. Т. 108. № 9. С. 093713-7. DOI: 10.1063/1.3505688
  6. Critical role of the surface reconstruction in the thermodynamic stability of (105) Ge pyramids on Si (001) / Raiteri P., Migas D.B., Miglio L., Rastelli A., Von Känel H. // Physical Review Letters. 2002. Т. 89. № 25. С. 2561031-2561034. DOI: 10.1103/PhysRevLett.88.256103
  7. Comparative study of structural, electronic and optical properties of Ca2Si, Ca2Ge, Ca2Sn, and Ca2Pb / Migas D.B., Miglio L., Shaposhnikov V.L., Borisenko V.E. // Physical Review B: Condensed Matter and Materials Physics. 2003. Т. 67. № 20. С. 2052031-2052037. DOI: 10.1103/PhysRevB.67.205203
  8. Electronic properties of semiconducting silicides: fundamentals and recent predictions / Ivanenko L.I., Shaposhnikov V.L., Filonov A.B., Krivosheeva A.V., Borisenko V.E., Migas D.B., Miglio L., Behr G., Schumann J. // Thin Solid Films. 2004. Т. 461. № 1. С. 141-147. DOI: 10.1016/j.tsf.2004.02.088
  9. Luminescence from β-FeSi2 precipitates in Si. II: origin and nature of the photoluminescence / Martinelli L., Grilli E., Migas D.B., Miglio L., Marabelli F., Soci C., Geddo M., Grimaldi M.G., Spinella C. // Physical Review B: Condensed Matter and Materials Physics. 2002. Т. 66. № 8. С. 853201-853209. DOI: 10.1103/PhysRevB.66.085320
  10. Tungsten oxides. II. The metallic nature of magńli phases / Migas D.B., Shaposhnikov V.L., Borisenko V.E. // Journal of Applied Physics. 2010. Т. 108. № 9. С. 093714-6. DOI: 10.1063/1.3505689
  11. Intrinsic nanofilamentation in resistive switching / Wu X., Pey K.-L., Cha D., Zhang X.-X., Li K., Bosman M., Raghavan N., Migas D.B., Borisenko V.E. // Journal of Applied Physics. 2013. Т. 113. № 11. С. 114503. DOI: 10.1063/1.4794519
  12. Electronic and elastic contributions in the enhanced stability of Ge (1 0 5) under compressive strain / Migas D.B., Cereda S., Montalenti F., Miglio L. // Surface Science. 2004. Т. 556. № 2-3. С. 121-128. DOI: 10.1016/j.susc.2004.03.023
  13. Theoretical and experimental study of interband optical transitions in semiconducting iron disilicide / Filonov A.B., Migas D.B., Shaposhnikov V.L., Borisenko V.E., Henrion W., Rebien M., Stauss P., Lange H., Behr G. // Journal of Applied Physics. 1998. Т. 83. № 8. С. 4410-4414.
  14. Band-gap modifications of β-FeSi2 with lattice distortions corresponding to the epitaxial relationships on Si (111) / Migas D.B., Miglio L. // Physical Review B: Condensed Matter and Materials Physics. 2000. Т. 62. № 16. С. 11063-11070.
  15. Structural, electronic and optical properties of Ru2Si3, Ru2Ge3, Os2Si3 and Os2Ge3 / Migas D.B., Miglio L., Shaposhnikov V.L., Borisenko V.E. // Physica Status Solidi (B): Basic Solid State Physics. 2002. Т. 231. № 1. С. 171-180.
  16. Structural, electronic, and optical properties of 001-oriented SiGe nanowires / Migas D.B., Borisenko V.E. // Physical Review B: Condensed Matter and Materials Physics. 2007. Т. 76. № 3. С. 035440.
  17. Role of oxygen vacancies in HFO2 -based gate stack breakdown // Wu X., Li X., Raghavan N., Pey K.L., Migas D.B., Borisenko V.E., Bosman M. / Applied Physics Letters. 2010. Т. 96. № 17. С. 172901. DOI: 10.1063/1.3416912
  18. Electronic and optical properties of isostructural β-FeSi2 and OsSi2 / Migas D.B., Miglio L., Henrion W., Rebien M., Marabelli F., Cook B.A. // Physical Review B: Condensed Matter and Materials Physics. 2001. Т. 64. № 7. С. 752081-752087.
  19. Luminescence from β-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship / Grimaldi M.G., Bongiorno C., Spinella C., Grilli E., Martinelli L., Gemelli M., Migas D.B., Miglio L., Fanciulli M. // Physical Review B: Condensed Matter and Materials Physics. 2002. Т. 66. № 8. С. 853191-8531910.
  20. Anisotropic photonic properties of III–V nanowires in the zinc-blende and wurtzite phase / Wilhelm C., Soci C., Larrue A., Dai X., Migas D.B. // Nanoscale. 2012. Т. 4. № 5. С. 1446-1454.
  21. Electronic properties of isostructural ruthenium and osmium silicides and germanides / Filonov A.B., Migas D.B., Shaposhnikov V.L., Dorozhkin N.N., Borisenko V.E., Heinrich A., Lange H. // Physical Review B: Condensed Matter and Materials Physics. 1999. Т. 60. № 24. С. 16494-16498.
  22. Semiconducting properties of hexagonal chromium, molybdenum, and tungsten disilicides / Filonov A.B., Migas D.B., Shaposhnikov V.L., Petrov G.V., Borisenko V.E., Tralle I.E., Dorozhkin N.N., Anishchik V.M. // Physica Status Solidi (B): Basic Solid State Physics. 1994. Т. 186. № 1. С. 209-215.
  23. New semiconducting silicide Ca3Si4 / Migas D.B., Shaposhnikov V.L., Filonov A.B., Borisenko V.E., Dorozhkin N.N. // Journal of Physics: Condensed Matter. 2007. Т. 19. № 34. С. 346207.